Reasearch areas of IMiO divisions
Article index
- Microelectronics and Nanoelectronics Devices Division
- VLSI Engineering and Design Automation Division
- Image and Microwave Photonics Division
- Microsystem and Electronic Material Technology Division
- Optoelectronics Division
Microelectronics and Nanoelectronics Devices Division
The research carried out in the Division falls into three main areas, namely: technology, diagnostics and modelling of semiconductor structures, as well as applications of microelectronics in digital signal processing.
To name a few examples of its research topics:
- modelling and investigation on kinetics of silicon oxidation (particularly of the beginning stages of the process);
- diagnostics and characterisation of properties of single and double insulating layers (gate stack including ultra thin oxide layers) by means of electrical measurements analysis;
- wear-out and degradation processes in MOS structures (breakdown of dielectrics layers, hot carriers effects, radiation damage effects);
- transport mechanism and quantum effects in MOS structures (transistor, tunnel diode) with ultra thin oxide;
- new materials (semiconductors and dielectrics) for microelectronics applications (e.g.: silicon carbide, gallium nitride, silicon-germanium, germanium);
- theoretical studies on MOS-SOI (silicon-on-insulator) and Si:Ge (silicon-germanium) MOS structure physics (modelling of devices behaviour and modelling for characterisation and diagnostics);
- nanoelectronic phenomena and devices (e.g. tunnel and resonance tunnel diodes and transistors, Coulomb blockade diode, single-electron transistors, memories);
- PECVD deposition of ultra thin dielectric layers for MOSFET gate dielectric (SiO2, Si3N4, SiOxNy);
- ultra shallow implantation from r.f. plasma;
- very low temperature processing of test structure;
- fabrication of ultrathin amorphous silicon layers by PECVD;
- fabrication of double barrier structures and devices;
- MEMS/MOEMS processing.