Reasearch areas of IMiO divisions

Article index

  1. Microelectronics and Nanoelectronics Devices Division
  2. VLSI Engineering and Design Automation Division
  3. Image and Microwave Photonics Division
  4. Microsystem and Electronic Material Technology Division
  5. Optoelectronics Division

Microelectronics and Nanoelectronics Devices Division

The research carried out in the Division falls into three main areas, namely: technology, diagnostics and modelling of semiconductor structures, as well as applications of microelectronics in digital signal processing.

 

To name a few examples of its research topics:

  • modelling and investigation on kinetics of silicon oxidation (particularly of the beginning stages of the process);
  • diagnostics and characterisation of properties of single and double insulating layers (gate stack including ultra thin oxide layers) by means of electrical measurements analysis;
  • wear-out and degradation processes in MOS structures (breakdown of dielectrics layers, hot carriers effects, radiation damage effects);
  • transport mechanism and quantum effects in MOS structures (transistor, tunnel diode) with ultra thin oxide;
  • new materials (semiconductors and dielectrics) for microelectronics applications (e.g.: silicon carbide, gallium nitride, silicon-germanium, germanium);
  • theoretical studies on MOS-SOI (silicon-on-insulator) and Si:Ge (silicon-germanium) MOS structure physics (modelling of devices behaviour and modelling for characterisation and diagnostics);
  • nanoelectronic phenomena and devices (e.g. tunnel and resonance tunnel diodes and transistors, Coulomb blockade diode, single-electron transistors, memories);
  • PECVD deposition of ultra thin dielectric layers for MOSFET gate dielectric (SiO2, Si3N4, SiOxNy);
  • ultra shallow implantation from r.f. plasma;
  • very low temperature processing of test structure;
  • fabrication of ultrathin amorphous silicon layers by PECVD;
  • fabrication of double barrier structures and devices;
  • MEMS/MOEMS processing.